InGaAs-APD/Preamp Receiver FRM5N143DS FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. • -25 dBm Typical Sensitivity • -7 dBm Overload Power (typ.) • 27 dB Optical Return Loss (ORL) • Integral Thermistor • Simplifies Receiver Circuit Design • Integrated HBT IC preamp APPLICATIONS This 80GHz gain bandwidth product APD detector with HBT preamp is intended to function as an optical receiver for DWDM, SONET, SDH optical fiber systems operating at 10Gb/s. This detector operates at both 1310 and 1550nm. The nominal 10kΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuit. It has a typical transimpedance (Zt) value of 1100Ω The detector preamplifier is DC coupled and has a differential electrical output. DESCRIPTION The FRM5N143DS incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBT IC amplifier in a hermetically sealed butterfly type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding. It has differential output with DC coupling. Edition 1.1 July 2004 1 InGaAs-APD/Preamp Receiver FRM5N143DS ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top 0 to +70 °C Supply Voltage Vss -6 to 0 V APD Reverse Voltage VR 0 to VB (Note 1) V APD Reverse Current IR 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min. 0.65 APD Breakdown Voltage VB ID=10µA 20 Temperature Coefficient of VB Γ (Note 2) AC Transimpedance Zt Parameter Limits Typ. 0.7 Unit Max. - A/W 30 35 V 0.03 0.05 0.07 V/°C RL=50Ω, f=130MHz, 800 1100 1400 Ω BW RL=50Ω, M=9, -3dB from 130MHz, Pin = -20dBm 7.5 8.0 - GHz Sensitivity Pr NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value - -25 -24 dBm Maximum Overload Po NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, M = 3 -8 -7 - dBm Optical Return Loss ORL - 27 - - dB Power Supply Current Iss - - 110 130 mA Power Supply Voltage Vss - -5.46 -5.2 -4.94 V Thermistor Resistance Rtr Vss=0V 9.5 10 10.5 kΩ Thermistor B Constant B Vss=0V 3,800 3,900 4,000 K Bandwidth Note: (1) VB differs from device to device. VB data is attached to each devices. (2) Γ=dVB/dTC 2 InGaAs-APD/Preamp Receiver FRM5N143DS Fig. 2 Multiplication Characteristics Fig. 1 Multiplication vs. Photocurrent 100 1.0E-03 Multiplication Factor (M) Tc=25°C Vss=-5.2V Pin = -7dBm -10dBm -13dBm -20dBm 1.0E-04 -27dBm 1.0E-05 1 10 30 20 25°C 1 0 10 20 30 40 Reverse Voltage VR(V) Fig. 3 Relative Frequency Response Fig. 4 Multiplication vs. Bandwidth 100 Tc = 25°C Vss=-5.2V RL=50Ω Pin=-27dBm λ = 1,550nm GB Product 80GHz Bandwidth (GHz) M=9 M=6 M=3 1 70°C 0°C 10 0.1 40 Vss=-5.2V Ipo=2µA Reverse Voltage VR(V) 5 1 10 Multiplication Factor (M) Frequency, f (GHz) Fig. 5 Bit Error Rate 10-3 λ=1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum 10-4 10-5 10-6 70°C 10-7 25°C 10-8 0°C 10-10 10-12 -30 -28 -26 -24 -22 Received Optical Power (dBm) 3 Tc=25°C Vss=-5.2V RL=50Ω λ=1,550nm Pin=-27dBm 10 1 15 10 Bit Error Rate 1.0E-06 Relative Response (3dB/div) Photocurrent (A) 1.0E-02 100 InGaAs-APD/Preamp Receiver FRM5N143DS Fig. 6 Sensitivity vs. Multiplication Factor Minimum Sensitivity, Pr (dBm) -23 Mopt: M = 8 -24 -25 -26 -27 0 5 15 10 20 Multiplication Factor, M Fig. 7 Input Wave Form 1,550nm, 9.9532Gb/s NRZ, 223-1 PRBS, duty and mark density=0.5 20psec/div Fig. 8 Output Wave Form Tc=25°C, RL=50Ω Pin=-26dBm, Vss=-5.2V, M=9 DATA DATA 20psec/div 4 InGaAs-APD/Preamp Receiver FRM5N143DS Fig. 9 Output Wave Form Tc=25°C, RL=50Ω, Pin=-20dBm Vss=-5.2V, M=3 20psec/div Fig. 10 Output Wave Form Tc=25°C, RL=50Ω, Pin=-7dBm, Vss=-5.2V, M=3 20psec/div 5 InGaAs-APD/Preamp Receiver FRM5N143DS FRM5N143DS Recommended Circuit 6.8nF 47Ω 0.47µF #16 #13 #14 #12 #11 50Ω #8 (OUT) DC-coupled 50Ω #9 (OUT) PD 20 to 50Ω 220pF #2,7,10 (GND) (>10nF) (>10nF) #1 (VR) #3 (Vss) 6 InGaAs-APD/Preamp Receiver FRM5N143DS UNIT: mm “DS” PACKAGE 5XP1.57=6.35 11.5 12-0.4 29.83 ø0.9 28.83±0.5 25.83 ø5.4 2-0.2 0.635 2-0.4 3.175 1.27±0.1 20.83 1 ø5.0 6 3.4 2.0±0.3 11 16 8.7 4-ø2.2 3.8 9.1 15.45 20.25 PIN DESIGNATIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PD Bias (+) Case Ground Power Supply For Preamp NC NC NC Case Ground Output (-) Output (+) Case Ground DC Feedback Out Feedback 1 Feedback 2 DC Feedback In NC Thermistor For APD NC For Pin 6.9 L 3.4 12.7 +0.3 -0 # For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 7