MICROSEMI JANTXV1N5711UR-1

• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS
PER MIL-PRF-19500/444
• 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS
PER MIL-PRF 19500/445
• SCHOTTKY BARRIER DIODES
• LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Operating Current:
5711 & 6263 TYPES
:33mA dc @ TEC = +140°C
2810, 5712 & 6858 Types :75mA dc @ TEC = +130°C
6857 Types
:150mA dc @ TEC = +110°C
Derating:
:All Types: Derate to 0 (zero) mA dc @ +150°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
MINIMUM
MAXIMUM
MAXIMUM
TYPE
BREAKDOWN
FORWARD
FORWARD
MAXIMUM REVERSE
NUMBER
VOLTAGE
VOLTAGE
VOLTAGE
VBR @ 10 µ A
V @ 1 mA
F
VOLTS
VOLTS
VOLTS@mA
NA
VOLTS
PICO FARADS
1N5711UR-1
70
0.41
1.0 @ 15
200
50
2.0
1
1N5712UR-1
20
0.41
1.0@35
150
16
2.0
1
1N6857UR-1
20
0.35
0.75@ 35
150
16
4.5
2
1N6858UR-1
70
0.36
0.65 @ 15
200
50
4.5
2
CDLL2810
20
0.41
1.0 @ 35
100
15
2.0
1
CDLL5711
70
0.41
1.0 @ 15
200
50
2.0
1
CDLL5712
20
0.41
1.0 @ 35
150
16
2.0
1
CDLL6263
60
0.41
1.0 @ 15
200
50
2.2
1
CDLL6857
20
0.35
0.75 @ 35
150
16
4.5
2
CDLL6858
70
0.36
0.65 @ 15
200
50
4.5
2
LEAKAGE CURRENT
MAXIMUM
CAPACITANCE @
V
R
= 0 VOLTS
ESDS
CLASS
f = 1.0 MHZ
NOTE:
V
I
F@ F
1
@V
R
R
C
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
T
FIGURE 1
Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 40
°C/W maximum
POLARITY: Cathode end is banded.
NOTICE:
Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the
factory for qualification completion dates. These two part numbers are being introduced by CDI as
“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and
a higher ESDS class with the only trade-off being an increase in capacitance.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
145
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
1N6858UR-1, CDLL5711, CDLL5712, CDLL2810,
CDLL6263, CDLL6857 and CDLL6858
10,000
IR – REVERSE CURRENT (nA)
IF – FORWARD CURRENT (mA)
100
10
1.0
.1
1000
100
10
1.0
.01
0
.2
.4
.6
.8
1.0
1.2
0
VF – FORWARD VOLTAGE (V)
5.0
10
15
20
25
30
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the CDLL2810
and CDLL5712 Schottky Diodes.
Figure 2.
CDLL2810 and CDLL5712
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
100,000
50
10
5
1
.5
.1
.05
.01
1000
1
10
1
0
.2
.4
.6
.8
1.0
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
CDLL5711.
146
10,000
RD – DYNAMIC RESISTANCE (!!)
IR – REVERSE CURRENT (nA)
IF – FORWARD CURRENT (mA)
1000
1.2
0
10
20
30
40
50
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CDLL5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at Various
Temperatures.
60
100
10
1
.1
1.0
10
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
100