ETC 131244

INFRA-RED
Item No.: 131244
1.
This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer
2.
Structure
2.1
Mesa structure
2.2
Electrodes
3.
Outlines (dimensions in microns)
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
p-Electrode
p-GaAlAs
365
p-Epitaxy GaAs
120
n-Epitaxy GaAs
280
typ.
n-Substrate GaAs
365
4.
n-Electrode
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Forward voltage
Reverse current
Conditions
IF = 20 mA
IR = 5 V
IF = 20 mA
output Power *
Φe
IF = 50 mA
Switching time
tr, tf
IF = 20 mA
Peak wavelength
IF = 20 mA
λP
Power measurement at OSA on gold plate
5.
min
VF
IR
typ
max
Unit
1,25
1,45
10
V
µA
3,0
7,5
mW
500
950
ns
nm
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φe typ
min
max
Quantity
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com