INFRA-RED Item No.: 127141 N 1. This specification applies to GaAlAs / GaAlAs Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy n-Electrode n-Epitaxy GaAlAs 325 120 150 typ. Active Layer p-Epitaxy GaAlAs p-Electrode 325 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min Forward voltage VF IF = 20 mA Reverse voltage VR IR = 10 µA 5 Φe IF = 20 mA 2,2 tr, tf IF = 20 mA output Power * Switching time Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. typ max Unit 1,70 2,10 V V 2,6 mW 40 ns 730 nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]