MICROSEMI 2N1132

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
LOW POWER PNP SILICONTRANSISTOR
Qualified per MIL-PRF-19500/177
DEVICES
LEVELS
2N1131
2N1131L
JAN
JANTX
JANTXV
2N1132
2N1132L
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAdc
PT
0.6
2.0
W
TJ, Tstg
-65 to +200
°C
Collector Current
Total Power Dissipation
(1)
@ TA = +25°C
@ TC = +25°C (2)
Operating & Storage Junction Temperature Range
TO-39
2N1131, 2N1132
NOTES:
1/ Derate linearly 3.43mW/°C for TA > +25°C
2/ Derate linearly 11.4mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
40
Collector- Base Breakdown Voltage
IC = 10µAdc
V(BR)CBO
Max.
Unit
Vdc
Vdc
50
Emitter-Base Cutoff Current
VEB = 5.0Vdc
IEBO
100
µAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc, RBE ≤ 10 ohms
ICER
10
mAdc
ICBO
10
1.0
µAdc
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 30Vdc
T4-LDS-0187 Rev. 1 (101882)
TO-5
2N1131L, 2N1132L
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
hFE
20
30
15
25
45
90
Unit
ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
IC = 150mAdc, VCE = 10Vdc
IC = 5.0mAdc, VCE = 10Vdc
2N1131, L
2N1132, L
2N1131, L
2N1132, L
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VCE(sat)
1.3
Vdc
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VBE(sat)
1.5
Vdc
Min.
Max.
Unit
15
30
50
90
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
2N1131, L
2N1132, L
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
Symbol
hfe
2N1131, L
2N1132, L
Small-Signal Open-Circuit Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
20
30
1.0
5.0
µmho
25
35
10
Ω
2.5
3.0
20
20
hob
Small-Signal Short-Circuit Input Impedance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
hib
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 10Vdc, f = 20MHz
2N1131, L
2N1132, L
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
|hfe|
Iutput Capacitance
VEB = 0.5Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Cobo
4.5
Cibo
80
pF
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
Symbol
t
on + toff
Min.
Max.
Unit
50
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0187 Rev. 1 (101882)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min Max
Min
Max
.305 .335
7.75
8.51
.240 .260
6.10
6.60
.335 .370
8.51
9.40
.200 TP
5.08 TP
.016 .021
0.41
0.53
.500 .750 12.70 19.05
.016 .019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.029 .045
0.74
1.14
.028 .034
0.71
0.86
.010
0.25
45° TP
45° TP
Note
6
7, 8
7, 8, 12
7, 8
7, 8
7, 8
5
4
3
10
6
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)
max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..
* FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).
T4-LDS-0187 Rev. 1 (101882)
Page 3 of 3