isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor S2818A DESCRIPTION ·High Voltage ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w n c . i m e UNIT 1500 V 5 V 5 A 7.5 A 4 A IC Collector Current-Continuous ICM Collector Current-peak IBM Base Current-peak PC Collector Power Dissipation @ TC≤95℃ 12.5 W Tj Junction Temperature 115 ℃ -65~115 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.6 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor S2818A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA hFE DC Current Gain IC= 4.5A; VCE= 5V COB Output Capacitance m e s isc fT VECF tf IE= 0; VCB= 10V; f= 1MHz w. Current-Gain—Bandwidth Product w w C-E Diode Forward Voltage Switching Times ts CONDITIONS Storage Time Fall Time isc Website：www.iscsemi.cn IC= 0.1A; VCE= 5V IF= 5A MIN TYP MAX UNIT 700 V 5 V 2.25 n c . i 125 pF 7 MHz 2.0 V 10 μs 0.7 μs IC= 4.5A; IB(end)= 1.8A