JMNIC 2SB887

JMnic
Product Specification
2SB887
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・High DC current gain.
・Large current capacity and wide ASO.
・Low saturation voltage.
・DARLINGTON
APPLICATIONS
・Motor drivers, printer
・Hammer drivers
・Relay drivers,
・Voltage regulator control
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-10
A
ICM
Collector current-peak
-15
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB887
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;RBE=∞
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ;IE=0
-110
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-10mA
VBEsat
Base-emitter saturation voltage
ICBO
UNIT
-1.5
V
IC=-5A; IB=-10mA
-2.0
V
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE
DC current gain
IC=-5A ; VCE=-3V
Transition frequency
IC=-5A ; VCE=-5V
fT
2
-1.0
MAX
1500
4000
20
MHz
JMnic
Product Specification
2SB887
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3