Product Specification www.jmnic.com BU2527DF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICP Collector current (Pulse) 30 A IB Base current (DC) 8 A IBM Base current (Pulse) 12 A Ptot Total power dissipation 45 W 150 ℃ -65~150 ℃ Tj Tstg TC=25℃ Max.operating junction temperature Storage temperature JMnic Product Specification www.jmnic.com BU2527DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5.0 V VBEsat Emitter-base saturation voltage IC=8A ;IB=1.6A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 110 hFE-1 DC current gain IC=1A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V CC Collector capacitance IE=0 ; VCB=10V；f=1MHz VF Diode forward voltage IF=8A 13.5 5 V mA 10 145 pF 2.0 JMnic V Product Specification www.jmnic.com BU2527DF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic