KEXIN BAR99

Diodes
SMD Type
Silicon Switching Diode
BAR99
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
For high-speed switching
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
P eak reverse volatge
F orw ard current
S urege forw ard current, T = 1
s
T otal pow er dissipation, T s = 54
Junction tem perature
S torage tem perature range
S ym bol
V alue
U nit
VR
70
V
V RM
70
V
IF
250
mA
IF S
4.5
A
P to t
370
mW
Tj
150
T stg
-65 to +150
Junction am bient (N ote 1)
R th
JA
330
K /W
Junction soldering point
R th
JS
260
K /W
N ote
1. P ackage m ounted on epoxy pcb 40 m m
40 m m
1.5 m m /6 cm 2 C u.
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1
Diodes
SMD Type
Silicon Switching Diode
BAR99
Electrical Characteristics Ta = 25
Parameter
Symbol
Breakdown voltage
VR
Conditions
Min
IR =100
70
A
IF = 1 mA
Forward voltage
VF
Reverse current
IR
Diode capacitance
CD
Reverse recovery time
trr
2
JGs
www.kexin.com.cn
V
855
1000
IF = 150 mA
1250
V R = 70 V
2.5
V R = 25 V,T A = 150
V R = 0 V,f = 1 MHz
IF = IR = 10 mA,R L = 100
Unit
715
IF = 50 mA
measured at IR = 1 mA
Marking
Max
IF = 10 mA
V R = 70 V,T A = 150
Marking
Typ
30
mV
A
50
1.5
pF
6
ns