Product specification BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR 30 V F orw ard c urrent IF 100 mA Tj 150 O perating tem perature range Junction tem perature T op -55 to + 125 S torage tem perature T stg -55 to + 150 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Reverse current IR V R = 20 V Forward voltage VF IF = 100 mA Diode capacitance CT Forward resistance rf Series inductance chip to ground LS Min Typ Max Unit 20 nA 1 V 0.93 V R = 1 V, f = 1 MHz 0.6 V R = 3 V, f = 1 MHz 0.57 IF = 5 mA, f = 100 MHz 0.7 1.5 pF nH Marking Type BAR81 Marking BBs http://www.twtysemi.com [email protected] 4008-318-123 1 of 1