Diodes SMD Type Silicon Schottky Diodes BAS125W;BAS125-04W BAS125-05W;BAS125-06W Features For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 25 V Forward current IF 100 mA I FSM 500 mA P tot 250 mW Tj 150 T stg -50 to +150 Surge forward current ( t 10m s) Total Power dissipation TS 25 Junction tem perature Storage tem perature Junction am bient BAS125W R thJA 310 K/W ( Note 1) R thJA 425 K/W R thJS 230 K/W 06W R thJS 265 K/W ( Note 1) Junction am bient BAS125-04W 06W Junction - soldering point BAS125W Junction - soldering point BAS125-04W Note Package m ounted on alum ina 15m m 16.7m m m 0.7m m Electrical Characteristics Ta = 25 Parameter Symbol Reverse current Test Conditions IR Forward voltage VF Min Typ Max VR = 20 V 150 VR = 25 V 200 IF = 1 mA 385 400 IF = 10 mA 530 650 IF = 35 mA 800 900 Diode capacitance CT VR = 0 V, f = 1 MHz Differential forward resistance RF IF = 5 mA, f = 10 KHz 1.1 Unit nA mV pF 16 Marking Type BAS125W BAS125-04W BAS125-05W BAS125-06W Marking 13s 14s 15s 16s www.kexin.com.cn 1