KEXIN BAS125

Diodes
SMD Type
Silicon Schottky Diodes
BAS125 series
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
protection,bias isolation and clamping applications
0.55
For low-loss, fast-recovery, meter
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Integrated diffused guard ring
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low forward voltage
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Values
Unit
Reverse voltage
VR
25
V
Forward current
IF
100
mA
Surge forward current
IFRM
Total power dissipation
P tot
Junction temperature
Tj
Storage temperature range
t
10 ms
Ts < 25
(Note 3)
R th JA
Junction-soldering point
R th JS
mA
250
mW
150
T stg
Junction-ambient
500
-55 to +150
Note 2
< 725
K/W
< 565
K/W
Note
1. For detailed information see chapter Package Outlines.
2.Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
3.450 mW per package.
www.kexin.com.cn
1
Diodes
SMD Type
Silicon Schottky Diodes
BAS125 series
Electrical Characteristics Ta = 25
Parameter
Symbol
Reverse voltage
Conditions
IR
Forward voltage
VF
Max
1
VR = 25 V
10
IF = 1 mA
385
IF = 10 mA
530
IF = 35 mA
800
Diode capacitance
CT
VR = 0, f= 10 kHz
Differential forward resistance
RF
IF = 5mA, f= 10 kHz
Type
BAS125
BAS125-04
BAS125-05
BAS125-06
Marking
13
14
15
16
www.kexin.com.cn
Typ
VR = 20 V
Marking
2
Min
A
410
mV
900
1.1
15
Unit
pF