LIGITEK LBD5117F-XX-PF

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LIGHT BAR LED DISPLAY
Pb
Lead-Free Parts
LBD5117F-XX-PF
DATA SHEET
DOC. NO
:
QW0905- LBD5117F-XX-PF
REV.
:
A
DATE
: 15 - Aug. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD5117F-XX-PF
Page 1/7
Package Dimensions
15.0
PIN 1
15.0
5.08
(0.2")
13.5
2
LBD5117F-XX-PF
LIGITEK
11.2
Ø0.51
TYP
7.0±0.5
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO.LBD5117F-XX-PF
Internal Circuit Diagram
LBD5117F-XX-PF
2
1
1.CATHODE
2.ANODE
Electrical Connection
LBD5117F-XX-PF
PIN NO.1
1
Cathode
2
Anode
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.LBD5117F-XX-PF
Page 3/7
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SRF
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
90
mA
Power Dissipation Per Chip
PD
75
mW
Ir
10
μA
Reverse Current Per Any Chip
Electrostatic Discharge( * )
ESD
2000
V
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
* glove
is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Part Selection And Application Information(Ratings at 25℃)
Material
common
cathode
or
anode
Emitted
AlGaInP
Red
CHIP
PART NO
LBD5117F-XX-PF
Common
Cathode
λD
(nm)
Electrical
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Max. Min. Typ.
630
20
1.5
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ± 15% testing tolerance.
2.4
91
175
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/7
PART NO.LBD5117F-XX-PF
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=20mA
Dominant Wavelength
λD
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.LBD5117F-XX-PF
Page 5/7
Typical Electro-Optical Characteristics Curve
SRF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
3.0
2.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize @25℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
700
100
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Page 6/7
PART NO. LBD5117F-XX-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One Time)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260° C
Temp(°C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD5117F-XX-PF
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11