LIGITEK LSD3E65-XX-PF

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
SINGLE DIGIT LED DISPLAY (0.39 Inch)
Pb
Lead-Free Parts
LSD3E65-XX-PF
DATA SHEET
DOC. NO
:
REV.
:
DATE
:
QW0905- LSD3E65-XX-PF
A
27 - Jun. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3E65-XX-PF
Page 1/8
Package Dimensions
9.9
(0.39")
LSD3E65-XX-PF
LIGITEK
16
14
1
PIN NO.1
7.0
(0.276")
13
A
F H JK B
14.0
(0.551")
10.0
(0.39")
G1 G2
9.76
11.0
5.08
(0.2") (0.384") (0.433")
ENM L C
D
5
6
9
8
ψ1.2(0.047")
3.5±0.5
Ø 0.45
TYP
2.35X2=4.7
(0.185")
7.5(0.295")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3E65-XX-PF
Page 2/8
Internal Circuit Diagram
LSD3E65-XX-PF
1
A B C D E F G1G2 H J K L M N DP
16 13 10 8 7 3 4 12 2 15 14 11 5 6 9
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3E65-XX-PF
Page 3/8
Electrical Connection
PIN NO.
LSD3E65-XX-PF
1
Common Anode
9
2
Cathode H
10
Cathode C
3
Cathode F
11
Cathode L
4
Cathode G1
12
Cathode G2
5
Cathode M
13
Cathode B
6
Cathode N
14
Cathode K
7
Cathode E
15
Cathode J
8
Cathode D
16
Cathode A
Cathode DP
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/8
PART NO. LSD3E65-XX-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SR
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
100
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
LSD3E65-XX-PF GaAlAs
Red
Common
Anode
Electrical
λP
(nm)
660
△λ
Vf(v)
(nm)
20
Iv(mcd)
Min.
Typ. Max. Min.
Typ.
1.5
1.8
5.0
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.4
3.05
IV-M
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3E65-XX-PF
Page 5/8
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3E65-XX-PF
Page 6/8
Typical Electro-Optical Characteristics Curve
SR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature(℃)
Ambient Temperature(℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 7/8
PART NO. LSD3E65-XX-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One Time)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260 ° C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260 ° C
Temp(° C)
260° C3sec Max
260°
5°/sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 8/8
PART NO. LSD3E65-XX-PF
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃± 5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃± 5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃± 5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
Thermal Shock Test
1.Ta=105 ℃±5℃ &-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11