LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 INFRARED EMITTING DIODES LVIR3331 DATA SHEET DOC. NO : QW0905-LVIR3331 REV. : A DATE : 18 - Oct - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/4 PART NO. LVIR3331 Package Dimensions 5.0 5.9 7.6 8.6 1.5MAX 25.0MIN □0.5 TYP 1.0MIN 2.54TYP + - Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LVIR3331series are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in blue transparent plastic T-1 3/4 package individually Device Selection Guide: PART NO MATERIAL LVIR3331 GaAIAs LENS COLOR Blue Transparent LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/4 PART NO. LVIR3331 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol UNIT VIR Forward Current IF 50 mA Peak Forward Current (300PPS,1μs Pulse) IFP 3 A Power Dissipation PD 100 mW Reverse Voltage Vr 5 V Operating Temperature Topr -55 ~ +100 ℃ Storage Temperature Tstg -55 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Electrical Optical Characteristics (Aa=25℃) SYMBOL Min. Typ. Radiant Intensity Le 10 Aperture Radiant Incidence Ee 1.2 Peak Emission Wavelength PARAMETER Max. UNIT TEST CONDITION 17 mW/sr IF=20mA 1.6 mW/cm IF=20mA λpeak 940 nm IF=20mA △λ 50 nm IF=20mA Forward Voltage VF 1.2 1.6 V IF=20mA Reverse Current IR 100 μA VR=5V Spectral Line Half Width Viewing Angle 2θ1/2 2 20 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ±15% testing tolerance. deg LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331 Page3/4 Typical Electro-Optical Characteristics Curve VIR CHIP Fig.1 Forward Current vs. DC Forward Voltage Relative Radiant Intensity Normalize @20mA Forward Current [mA] 1000 Fig.2 Relative Radian Intensity vs.wavelength 100 10 1.0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.0 0.5 0.0 4.0 800 850 Fig.4 Relative Radiant Power vs. Forward Peak Current 10.0 10.0 Relative Radiant Power Normalized @ 100 mA Fig 3. Relative Radiant Power vs. Forward Peak Current 1.0 0.1 1.0 100 10 1.0 0.1 10 100 Fig.6 Relative Radiant Power vs. Temperature 1.2 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 Ambient Temperature [ ℃] 100 Relative Radiant Power @ 20mA, Normalize @ 25 ℃ Fig.5 Forward DC Voltage vs. Temperature -40 1000 IFPK [mA] IFDC [mA] Forw ard DC Voltage @ 20 mA Normalize @ 25 ℃ 1000 1050 1100 Wavelength[nm] Forward Voltage[V] Relative Radiant Power Normalized @ 20mA 900 950 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 Ambient Temperature [ ℃] 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/4 PART NO. LVIR3331 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11