LIGITEK LHIR9653-50B-L37

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
INFRARED EMITTING DIODES
Pb
Lead-Free Parts
LHIR9653-50B/L37
DATA SHEET
DOC. NO :
QW0905- LHIR9653-50B/L37
REV.
:
A
DATE
:
26 - Dec. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/5
PART NO. LHIR9653-50B/L37
Package Dimensions
CATHODE
R0.7
7.62±0.5
ψ4.55
ANODE
7.62±0.5
3.4
4.8±0.5
2.5±0.5
8.3±0.5
0.5
3.5±0.5
0.4
1.55
5.08
5.08±0.3
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
Features:
1. High radiant intensity.
2. Suitable for pulsed applications.
3. Low average degradation.
Descriptions:
The LHIR9653-50B/L37 series are high power solution grown efficiency Gallium Arsenide
infrared emitting diodes encapsulated in water clear plastic
T-1 3/4 package individually
Device Selection Guide:
PART NO
MATERIAL
LENS COLOR
LHIR9653-50B/L37
GaAIAs/GaAs
Water Clear
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PART NO. LHIR9653-50B/L37
Page 2/5
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
UNIT
HIR
Forward Current
IF
50
mA
Peak Forward Current
(300PPS,10 μs Pulse)
IFP
1
A
Power Dissipation
PD
100
mW
Reverse Voltage
Vr
5
V
Electrostatic Discharge( * )
ESD
2000
V
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +85
℃
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
* glove
is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Electrical Optical Characteristics (Aa=25℃)
SYMBOL
Min.
Typ.
Radiant Intensity
Le
5.0
Aperture Radiant Incidence
Ee
0.71
Peak Emission Wavelength
Max.
UNIT
TEST CONDITION
8.0
mW/sr
IF=20mA
1.14
mW/cm
IF=20mA
λpeak
850
nm
IF=20mA
△λ
50
nm
IF=20mA
Forward Voltage
VF
1.2
1.6
V
IF=20mA
Reverse Current
IR
100
μA
VR=5V
PARAMETER
Spectral Line Half Width
Viewing Angle
2θ1/2
2
36
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The radiant intensity data did not including ±15% testing tolerance.
deg
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LHIR9653-50B/L37
Page3/5
Typical Electro-Optical Characteristics Curve
HIR CHIP
Fig.1 Forward Current vs. Rorward Voltage
Fig.2 Relative Radiant Power vs. Wavelength
1.0
Relative Radiant Power
Normalize @20mA
Forward Current[mA]
1000
100
10
1
0.1
0.0
1.0
2.0
3.0
4.0
0.5
0.0
800
850
Wavelength[nm]
Forward Voltage[V]
Fig.4 Relative Radiant Power
vs. Forward Peak Current
Fig.3 Relative Radiant Power
vs. Forward DC Current
10.0
Relative Radiant Power
Normalize @100 mA
Relative Radiant Power
Normalize @20mA
10.0
1.0
0.1
1
10
1.0
0.1
10
100
100
Fig.6 Relative Radiant Power vs. Temperature
Fig.5 Forward DC Voltage vs. Temperature
1.1
1.0
0.9
-20
0
20
40
60
80
Ambient Temperature [℃]
100
Relative Radiant Power
Normalize @ 20mA, 25 ℃
1.2
0.8
-40
1000
IFPK [mA]
IFDC[mA]
Forward DC Voltage
Normalize @20mA, 25 ℃
950
900
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature[ ℃]
80
100
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LHIR9653-50B/L37
Page 4/5
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One time only)
Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to body)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
50
100
60 Seconds Max
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
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PART NO. LHIR9653-50B/L37
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11