LIGITEK LVIR3333

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C
TEL:(02)22677686(REP)
FAX:(02)22675286,(02)22695616
INFRARED EMITTING DIODES
LVIR3333
DATA SHEET
DOC. NO :
QW0905-LVIR3333
REV.
:
A
DATE
:
18 - Oct - 2004
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/4
PART NO. LVIR3333
Package Dimensions
5.0
5.9
7.6
8.6
1.5MAX
25.0MIN
□0.5
TYP
1.0MIN
2.54TYP
+ -
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
Features:
1. High radiant intensity.
2. Suitable for pulsed applications.
3. Low average degradation.
Descriptions:
The LVIR3331series are high power solution grown efficiency Gallium Arsenide
infrared emitting diodes encapsulated in water clear plastic
T-1 3/4 package individually
Device Selection Guide:
PART NO
MATERIAL
LENS COLOR
LVIR3333
GaAIAs
Water Clear
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Property of Ligitek Only
Page 2/4
PART NO. LVIR3333
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
UNIT
VIR
Forward Current
IF
50
mA
Peak Forward Current
(300PPS,1 μs Pulse)
IFP
3
A
Power Dissipation
PD
100
mW
Reverse Voltage
Vr
5
V
Operating Temperature
Topr
-55 ~ +100
℃
Storage Temperature
Tstg
-55 ~ +100
℃
Soldering Temperature
Tsol
Max 260 ℃ for 5 sec Max
(2mm from body)
Electrical Optical Characteristics (Aa=25℃)
SYMBOL
Min.
Typ.
Radiant Intensity
Le
10
Aperture Radiant Incidence
Ee
1.2
Peak Emission Wavelength
Max.
UNIT
TEST CONDITION
17
mW/sr
IF=20mA
1.6
mW/cm
IF=20mA
λpeak
940
nm
IF=20mA
△λ
50
nm
IF=20mA
Forward Voltage
VF
1.2
1.6
V
IF=20mA
Reverse Current
IR
100
μA
VR=5V
PARAMETER
Spectral Line Half Width
Viewing Angle
2θ1/2
2
20
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The radiant intensity data did not including ±15% testing tolerance.
deg
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LVIR3333
Page 3/4
Typical Electro-Optical Characteristics Curve
VIR CHIP
Fig.1 Forward Current vs. DC Forward Voltage
Relative Radiant Intensity
Normalize @20mA
Forward Current [mA]
1000
Fig.2 Relative Radian Intensity vs.wavelength
100
10
1.0
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.0
0.5
0.0
4.0
800
850
Fig.4 Relative Radiant Power
vs. Forward Peak Current
10.0
10.0
Relative Radiant Power
Normalized @ 100 mA
Fig 3. Relative Radiant Power
vs. Forward Peak Current
1.0
0.1
1.0
100
10
1.0
0.1
10
100
Fig.6 Relative Radiant Power vs. Temperature
1.2
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
Ambient Temperature [ ℃]
100
Relative Radiant Power
@ 20mA, Normalize @ 25 ℃
Fig.5 Forward DC Voltage vs. Temperature
-40
1000
IFPK [mA]
IFDC [mA]
Forw ard DC Voltage @ 20 mA
Normalize @ 25 ℃
1000 1050 1100
Wavelength[nm]
Forward Voltage[V]
Relative Radiant Power
Normalized @ 20mA
900 950
3.0
2.5
2.0
1.5
1.0
0.5
0
-40
-20
0
20
40
60
80
Ambient Temperature [ ℃]
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/4
PART NO. LVIR3333
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11