NIEC PTMB50E6C

QS043-402-(2/5)
PTMB50E6
IGBT Module- Six Pack
50 A,600V
□ 回 路 図 : CIRCUIT
PTMB50E6C
□ 外 形 寸 法 図 : OUTLINE DRAWING
94
93.00
4× 15.24= 60.96
16.02 15.24
12.62
83
5-fasten tab
#250
CL
17
G6
E6
V
12-fasten tab
#110
G2 E2
G4 E4
PTMB50E6
W
11.00
32.00
U
G6 E6
12
1
15.5
2.50
18
18 15.75
5 13 5 13 5
3.81
8.00
11.43
5× 11.43= 57.15
70.40
107.00
13
PTMB50E6C
15.00
15.00
LABEL
2.00
11
12
21.00
13.00
8
LABEL
21
14
7
8
6
15
4-Ø 2.10
1.15× 1.00
9
10
7.00
17
3
4
5
6
32
16
1
2
2-Ø 5.50
13
G5 E5
CL
G3E3
44
W
G4
E4
G1 E1
45.00
41.91
28.4
V
G2
E2
2-Ø 5.5
G5
E5
18
U
G3
E3
33
24
G1
E1
4-Ø 6.00
104.20
PTMB50E6
PTMB50E6C
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (TC=25℃)
Item
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
Rated
Symbol
Value
Unit
VCES
600
V
VGES
±20
V
IC
ICP
50
100
A
コ レ ク タ 損 失
Collector Power Dissipation
PC
250
W
接
合
温
度
Junction Temperature Range
Tj
-40~+150
℃
保
存
温
度
Storage Temperature Range
Tstg
-40~+125
℃
DC
1ms
コ レ ク タ 電 流
Collector Current
絶
縁
耐
圧(Terminal to Base AC,1minute)
Isolation Voltage
締 め 付 け ト ル ク
Module Base to Heatsink
Mounting Torque
□ 電 気 的 特 性
VISO
2,500
V(RMS)
Ftor
2(20.4)
N・m
(kgf・cm)
: ELECTRICAL CHARACTERISTICS (TC=25℃)
Characteristic
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
ICES
VCE= 600V, VGE= 0V
-
-
1.0
mA
IGES
VGE= ±20V,VCE= 0V
-
-
1.0
μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
VCE(sat)
IC= 50A,VGE= 15V
-
2.1
2.6
V
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
VGE(th)
VCE= 5V,IC= 50mA
4.0
-
8.0
V
入
力
容
量
Input Capacitance
スイッチング時間
Switching Time
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
□フリーホイーリングダイオードの 特 性: FREE
Time
Time
Time
Time
VCE= 10V,VGE= 0V,f= 1MHZ
-
2,500
-
pF
tr
ton
tf
toff
VCC=
RL=
RG=
VGE=
-
-
-
-
0.15
0.25
0.10
0.35
0.30
0.40
0.35
0.70
μs
300V
6.0Ω
20Ω
±15V
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Item
順
電
流
Forward Current
Cies
DC
1ms
Characteristic
順
電
圧
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
Rated
Symbol
IF
IFM
Symbol
Test Condition
Value
50
100
Unit
A
Min.
Typ.
Max.
Unit
VF
IF= 50A,VGE= 0V
-
1.9
2.4
V
trr
IF= 50A,VGE= -10V
di/dt= 100A/μs
-
0.15
0.25
μs
Min.
-
-
Typ.
-
-
Max.
0.50
1.10
Unit
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱
抵
抗
IGBT
Thermal Impedance
Diode
Symbol
Rth(j-c)
Test Condition
Junction to Case
(Tc測定点チップ直下)
℃/W
00
日本インター株式会社
QS043-402-(3/5)
PTMB50E6
PTMB50E6C
Fig.1- Output Characteristics (Typical)
VGE=20V
VGE=20V
Collector Current I C (A)
60
50
10V
40
30
15V
80
11V
70
9V
11V
70
60
10V
50
40
9V
30
20
20
8V
10
0
0
1
2
3
4
8V
10
0
5
0
1
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage V CE (V)
50A
10
8
6
4
2
4
8
12
16
5
T C=125°C
IC=25A
14
50A
12
10
8
6
4
2
0
20
100A
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
400
16
RL =6.0(
TC=25°C
350
VGE=0V
f=1MHZ
T C=25°C
14
300
12
250
10
VCE =300V
200
8
200V
150
6
100V
100
4
Cies
3000
1000
Coes
Cres
300
100
2
50
0
10000
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage V CE (V)
100A
12
0
4
16
Capacitance C (pF)
Collector to Emitter Voltage V CE (V)
IC=25A
14
3
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
T C=25°C
16
2
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
0
12V
90
15V
80
T C=125°C
100
12V
90
Collector Current I C (A)
Fig.2- Output Characteristics (Typical)
T C=25°C
100
0
50
100
150
0
200
30
0.1
Total Gate Charge Qg (nC)
0.2
0.5
1
2
5
10
20
50
100
200
Collector to Emitter Voltage VCE (V)
00
日本インター株式会社
QS043-402-(4/5)
PTMB50E6
PTMB50E6C
Fig.7- Collector Current vs. Switching Time (Typical)
1
10
VCC=300V
RG=20(
VGE=±15V
T C=25°C
Resistive Load
tOFF
5
2
Switching Time t (µs)
Switching Time t (µs)
0.8
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
0.6
tf
0.4
tON
0.2
1
0.5
toff
0.2
ton
tr(V CE)
tf
0.1
0.05
tr(VCE)
0
VCC=300V
IC=50A
VGE=±15V
T C=25°C
Resistive Load
0
20
40
60
0.02
80
10
30
Collector Current IC (A)
10
tOFF
5
2
Switching Time t (µs)
Switching Time t (µs)
VCC=300V
RG=20(
VGE=±15V
T C=125°C
Inductive Load
tON
tf
0.1
tr(Ic)
0.01
0.001
0
20
40
60
1
0.5
toff
0.2
ton
0.1
tf
0.05
tr(IC )
0.02
80
VCC=300V
IC=50A
VGE=±15V
T C=125°C
Inductive Load
10
30
Fig.11- Collector Current vs. Switching Loss
300
Fig.12- Series Gate Impedance vs. Switching Loss
4
100
VCC=300V
RG=20(
VGE=±15V
T C=125°C
Inductive Load
3
EOFF
EON
2
ERR
1
0
10
20
30
40
50
60
70
80
Switching Loss ESW (mJ/Pulse)
Switching Loss ESW (mJ/Pulse)
100
Series Gate Impedance RG (( )
Collector Current IC (A)
0
300
Fig.10- Series Gate Impedance vs. Switching Time
Fig.9- Collector Current vs. Switching Time
10
1
100
Series Gate Impedance RG (( )
VCC=300V
IC=50A
VGE=±15V
T C=125°C
Inductive Load
30
EON
10
EOFF
3
ERR
1
0.3
10
Collector Current IC (A)
30
100
300
Series Gate Impedance RG (( )
00
日本インター株式会社
QS043-402-(5/5)
PTMB50E6
PTMB50E6C
Fig.13- Forward Characteristics of Free Wheeling Diode
(Typical)
T C=25°C
Fig.14- Reverse Recovery Characteristics (Typical)
1000
60
40
20
1
2
3
500
trr
200
100
50
20
10
5
2
4
IRrM
0
50
100
Forward Voltage VF (V)
150
200
250
300
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area
200
RG=20 (, VGE=±15V, T C<125°C
100
50
Collector Current I C (A)
0
20
10
5
2
1
0.5
0.2
0.1
0
200
400
600
800
Collector to Emitter Voltage V CE (V)
Fig.16- Transient Thermal Impedance
1x10 1
Transient Thermal Impedance Rth (J-C) (°C/W)
Forward Current I F (A)
80
0
IF=50A
T C=25°C
T C=125°C
T C=125°C
Peak Reverse Recovery Current I RrM (A)
Reverse Recovery Time trr (ns)
100
3
FRD
1
IGBT
3x10 -1
1x10 -1
3x10 -2
T C=25°C
1x10 -2
1 Shot Pulse
3x10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
00
日本インター株式会社