NTE26 Silicon NPN Transistor Low Noise Audio Amplifier Features: D VCEO = 120V (Min) D Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 120V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 0.1 µA DC Current Gain hFE VCE = 6V, IC = 2mA 350 – 700 – – 0.3 V VCE = 6V, IC = 1mA – 100 – MHz Collector–Emitter Saturation Voltage Current Gain–Bandwidth Product VCE(sat) IC = 10mA, IB = 1mA fT Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 3.0 – pF Noise NF VCE = 6V, IC = 0.1mA, f = 1kHz, rg = 10kΩ – 1.0 10 dB .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max E C B .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max