Opto–Switch EE–SX1041 Transmissive Phototransistor output. Stable sensing at temperatures as high as 95°C. General-purpose model with a 5-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Dimensions 0.2 max. 0.2 max. 14±0.2 Internal Circuit K C A E 6±0.2 0.5±0.1 Optical axis 5 min. Name Anode Cathode Collector Emitter Unless otherwise specified, the tolerances are as shown below. Two, 0.7± 0.1 Four, 0.25 Four, 0.5 Terminal No. A K C E 2.35±0.1 5.2±0.1 Two, 2.54 Dimensions Tolerance 3 mm max. ±0.3 3 t mm v 6 ±0.375 6 t mm v 10 ±0.45 10 t mm v 18 ±0.55 18 t mm v 30 ±0.65 Two, 0.7±0.1 dia. Specifications Absolute Maximum Ratings (Ta = 25°C) Item Emitter Detector Ambient temperature Note: Symbol Rated value Forward current IF 50 mA (see note 1) Pulse forward current IFP 1 A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 95°C Storage Tstg –30°C to 100°C Soldering Tsol 260°C 1.Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2.The pulse width is 10 µs maximum with a frequency of 100 Hz. Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 µA typ., 10 µA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 ȏx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector Engineering Data Ambient temperature Ta (°C) Light Current vs. Collector–Emitter Voltage Characteristics (Typical) IF = 30 mA IF = 20 mA IF = 10 mA Collector–Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current I L (mA) VCE = 10 V 0 ȏx IF = 20 mA VCE = 5 V Sensing Position Characteristics (Typical) Relative light current I L (%) Response time tr, tf ( µ s) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Vcc = 5 V Ta = 25°C Load resistance RL (kΩ) Ta = 70°C Forward voltage VF (V) Relative light current I L (%) Light current I L (mA) IF = 40 mA Ta = 25°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25°C IF = 50 mA Ta = –30°C Dark current I D (nA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25 °C VCE = 10 V Forward current I F (mA) IF Forward current I F (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Distance d (mm)