SANKEN 2SK3801

MOS FET 2SK3801
100 (Tc=25ºC)
400
150
–40 to +150
* 1: PW 100µs, duty cycle 1%
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50Ω
■ ID — VDS Characteristics (typ.)
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
R th (ch-c)
R th (ch-a)
ID = 100µA, VGS = 0V
VGS = ±15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A
min
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22Ω
RL = 0.57Ω, VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/µs
70
60
60
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
°C/W
°C/W
±10
100
4.0
3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
100
2.0
30
6.0
1.5
1.25
35.71
2
30
20
20
10
10
0
0.5
0
1.0
1.5
0
2.0
Ta = 150°C
25°C
–55°C
0
1.0
2.0
(1)
(2)
VDS (V)
0.4
(3)
4.0
5.0
6.0
0
7.0
Ta = 25ºC
VGS = 10V
(VDS = 10V)
1000
ID = 35A
VGS = 10V
10.0
Tc = –55°C
25°C
150°C
100
10
1
5
0
10
15
1
20
10
VGS (V)
■ RDS (ON) — TC Characteristics (typ.)
■
(Unit: mm)
35A
VGS (V)
■ RDS (ON) — I D Characteristics (typ.)
7.0
0.6
0.2
a) Part No.
b) Lot No.
1. Gate
2. Drain
3. Source
■ Re (yfs) — ID Characteristics (typ.)
(Ta = 25ºC)
ID = 70A
3.0
1.4
5.45±0.1
Re (yfs) (S)
VGS = 4.5V
40
0.65 –0.1
15.8±0.2
1.0
VDS (V)
30
ID (A)
ID (A)
40
+0.2
+0.2
1.05 –0.1
50
10V
5.5V
5.0V
2.0±0.1
3
0.8
50
4.8±0.2
3.2±0.1
a
b
5.45±0.1
■ VDS — VGS Characteristics (typ.)
(VDS = 10V)
15.6±0.4
13.6
9.6
Unit
max
40
■ ID — VGS Characteristics (typ.)
70
External Dimensions TO-3P
(Ta=25ºC)
Ratings
typ
1.8
5.0±0.2
Electrical Characteristics
Unit
V
V
A
A
W
mJ
ºC
ºC
2.0
Ratings
40
±20
±70
±140
19.9±0.3
4.0
Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*1
Tch
Tstg
20.0 min
4.0 max
Absolute Maximum Ratings (Ta=25ºC)
j-c
70
ID (A)
— Pw Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.)
(ID = 35A)
30
10
6.0
15
VDS
2.0
4.0
20
1
10
VGS
VDD = 8V
12V
14V
16V
24V
10
0.1
VGS (V)
3.0
6.0
VDS (V)
4.0
j-c (ºC/W)
RDS (ON) (mΩ)
RDS (ON) (mΩ)
8.0
5.0
5
2.0
1.0
0
10
20
30
40
50
60
0
–60 –50
70
0
ID (A)
50
100
150
Tc (ºC)
(Ta = 25ºC)
10
100
ED
N)
Ciss
IDR (A)
PT
IT
50
40
Ta = 150°C
25°C
–55°C
30
Coss
20
S
10
M
LI
PT
(O
RD
PT
=1
0µ
20
30
VDS (V)
112
40
50
0
150
=1
100
00
=1
m
0m s
s
µs
80
60
40
1
20
0
10
100
120
s
10
0
50
=1
Crss
100
0
(Ta = 25ºC)
PT
60
10000
100
Qg (nC)
500
IC (A)
Capacitance (pF)
1
■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
70
VGS = 0V
f = 1MHz
1000
0
0.1
Pw (s)
■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.)
50000
0.01
0.00001 0.0001 0.001 0.01
PD (W)
0
0
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
0.1
0.1
0
1
10
VDS (V)
100
0
20
40
60
80 100 120 140 160
Tc (ºC)