SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION · ·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SA1006 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SA1006A Open emitter Emitter-base voltage -200 2SA1006B -250 2SA1006 -180 2SA1006A UNIT -180 Open base 2SA1006B VEBO VALUE -200 V V -250 Open collector -5 V IC Collector current -1.5 A ICM Collector current-Peak -3.0 A PT Total power dissipation Ta=25 1.5 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SA1006 2SA1006A 2SA1006B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS MAX UNIT IC=-0.5A; IB=-50mA -1.0 V Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-150V ;IE=0 -1 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 µA hFE-1 DC current gain IC=-5mA ; VCE=-5V 30 hFE-2 DC current gain IC=-150mA ; VCE=-5V 60 Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 45 pF fT Transition frequency IC=-100mA ; VCE=10V 80 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 2 MIN TYP. 320 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SA1006 2SA1006A 2SA1006B 4 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 5 2SA1006 2SA1006A 2SA1006B