SavantIC Semiconductor Product Specification 2SC3300 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·Power and general purpose application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 15 A ICM Collector current-peak 25 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3300 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCE(sat) Collector-emitter saturation voltage IC=10A ;IB=1A 0.5 V VBE(sat) Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V 2 MIN 30 TYP. MAX 120 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC3300