SavantIC Semiconductor Product Specification 2SB1419 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For low frequency and high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current-peak -20 A PC Collector power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1419 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -1.8 V VBE Base-emitter voltage IC=-8A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 hFE-3 DC current gain IC=-8A ; VCE=-5V 20 hFE-2 classifications Q S P 60-120 80-160 100-200 2 MIN TYP. MAX -160 UNIT V 200 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SB1419