SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 6 A 0.6 A 60 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5A 2.0 V VBE Base-emitter voltage IC=3A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 5 µA IEBO Emitter cut-off current VEB=5V; IC=0 5 µA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=3A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 75 pF hFE-1 classifications R O 55-110 80-160 2 MIN TYP. MAX 80 UNIT V 160 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC5196 SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors 4