SavantIC Semiconductor Product Specification 2SD716 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB686 APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IE Emitter current -6 A PT Total power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD716 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ,IC=0 5 V Collector-emitter saturation voltage IC=4A; IB=0.4A 2.0 V VBE Base-emitter voltage IC=4A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V 12 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 100 pF VCEsat CONDITIONS hFE Classifications R O 55-110 80-160 2 MIN TYP. 55 MAX UNIT 160 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD716