SavantIC Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 16 A 60 W PC Collector power dissipation 3 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-emitter saturation voltage VBE(sat) MAX UNIT IC=5A;IB=1.25 A 5.0 V Base-emitter saturation voltage IC=5A;IB=1.25 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO Emitter cut-off current VEB=4V ;IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 µA ICES Collector cut-off current VCE=1500V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 20 30 hFE-2 DC current gain IC=5A ; VCE=5V 4 7 VCEO(SUS) CONDITIONS MIN TYP. 800 V Switching times tstg tf Storage time Fall time IC=4A;RL=50A IB1=0.8A; IB2=-1.6A VCC=200V 2 0.1 3.0 µs 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC5297 SavantIC Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors 4