SAVANTIC 2SC4923

SavantIC Semiconductor
Product Specification
2SC4923
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High speed
·High reliability
·High breakdown voltage
APPLICATIONS
·High-definition CRT display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
ICP
Collector current-peak
25
A
PC
Collector power dissipation
3
W
TC=25
70
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC4923
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Collector-emitter sustaining voltage
IC=100mA ;IB=0
ICBO
Collector cut-off current
VCE=800V; IE=0
10
µA
ICES
Collector cut-off current
VEB=1500V; RBE=0
1.0
mA
IEBO
Emitter cut-off current
VCE=4V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=6A ; VCE=5V
4
VCE(sat)
Collector-emitter saturation voltage
IC=6A ; IB=1.5A
5
V
VBE(sat)
Base-emitter saturation voltage
IC=6A ; IB=1.5A
1.5
V
Storage time
IC=6A; IB1=1.2A;IB2=-2.4A
3
µs
Fall time
IC=6A; IB1=1.2A;IB2=-2.4A
0.2
µs
tstg
tf
2
800
UNIT
V
8
0.1
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC4923
SavantIC Semiconductor
Product Specification
2SC4923
Silicon NPN Power Transistors
4