SAVANTIC 2SD1279

SavantIC Semiconductor
Product Specification
2SD1279
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal deflection output
applications
·Switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1400
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
5
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1279
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=2A
1.6
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=10V
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
Fall time
ICP=7A ;IB1(end)=1.5A
fT
COB
tf
CONDITIONS
2
MIN
TYP.
MAX
600
8
UNIT
V
22
3
MHz
165
pF
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD1279