SAVANTIC 2SD841

SavantIC Semiconductor
Product Specification
2SD841
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High speed switching
·High voltage:VCBO=800V(Min)
APPLICATIONS
·High voltage switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
5
V
3
A
1.5
A
IC
Collector current
IB
Base current
PC
Collector power dissipation
TC=25
40
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD841
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.5A; IB=50mA
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
8
hFE-2
DC current gain
IC=0.5A ; VCE=5V
10
fT
Transition frequency
IE=-0.1A ; VCE=10V
4
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
75
pF
Fall time
IC=0.5A; IB1=-IB2=50mA
VCC=200V; RL=400@
tf
CONDITIONS
2
MIN
TYP.
MAX
400
UNIT
V
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD841