SavantIC Semiconductor Product Specification 2SD1439 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 5 V VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector IC Collector current (DC) 3 A ICM Collector current (Pulse) 10 A IBM Base current (Pulse) 3.5 A PC Collector power dissipation 50 W Tj Junction temperature 130 Tstg Storage temperature -55~130 TC=25 SavantIC Semiconductor Product Specification 2SD1439 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.75A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 50 µA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=2A ; VCE=10V ts Storage time tf Fall time VF 5 UNIT 4 V 12 7.0 µs 0.75 µs 2.2 V IC=2A IBend=0.75A,LLeak=5µH Diode forward voltage IF=-4A,IB=0 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1439