SAVANTIC 2SD211

SavantIC Semiconductor
Product Specification
2SD211
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Large current capability
·Wide area of safe operation
APPLICATIONS
·For power amplifier and switching
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
10
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD211
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A ; IB=0.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ; IB=0.5A
2.5
V
ICBO
Collector cut-off current
VCB=60V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=4V
Transition frequency
IC=1A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
30
8
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD211