SAVANTIC BU102

SavantIC Semiconductor
Product Specification
BU102
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·VCEO(sus)=150V (min)
APPLICATIONS
·Designed for horizontal deflection
output stage of CTV receivers
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
6
V
7
A
100
W
IC
Collector current
PC
Collectorl power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
BU102
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
V(BR)EBO
Emitter-base breakdown votage
V(BR)CBO
MIN
TYP.
MAX
UNIT
150
V
IE=1mA; IC=0
6
V
Collector-base breakdown votage
IC=1mA; IE=0
400
V
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=1.0 A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1.0 A
2.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=100V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
2
30
120
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU102