SAVANTIC 2SC1050

SavantIC Semiconductor
Product Specification
2SC1050
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For use in audio and general
purpose applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25? )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
6
V
1
A
40
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
?
Tstg
Storage temperature
-55~150
?
Tmb=25?
SavantIC Semiconductor
Product Specification
2SC1050
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=0.1A
1.2
V
VBEsat
Base-emitter saturation voltage
IC=0.5A; IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=300V; IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=0.3A ; VCE=5V
2
300
UNIT
30
V
200
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1050