SavantIC Semiconductor Product Specification BU1506DX Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching ·Built-in damper diode. APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 3 A IBM Base current-peak 8 A PC Collector dissipation 32 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification BU1506DX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 13.5 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.79A 5.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.79A 1.1 V ICES Collector cut-off current VCE=rated;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 180 mA hFE-1 DC current gain IC=0.3A ; VCE=5V hFE-2 DC current gain IC=3.0A ; VCE=5V VF Diode forward voltage CC Collector output capacitance V 90 12 5.5 7.5 IF=3.0A 1.6 2.0 IE=0,f=1MHz;VCB=10V 47 2 3.8 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU1506DX