SavantIC Semiconductor Product Specification BU911 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON APPLICATIONS ·Solenoid and relay drivers ·Motor control ·Electronic automotive ignition PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 6 A ICM Collector current (peak) 10 A IB Base current 1 A 60 W Ptot Tj Tstg Total power dissipation TC=25 Max.operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification BU911 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH VCEsat-1 Collector-emitter saturation voltage IC=2.5A ;IB=50mA 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=200mA 1.8 V VBEsat-1 Base-emitter saturation voltage IC=2.5A ;IB=50mA 2.2 V VBEsat-2 Base-emitter saturation voltage IC=4A ;IB=200mA 2.5 V ICES Collector cut-off current VCE =450V; VBE=0; TC=125 1.0 5.0 mA ICEO Collector cut-off current VCE =400V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE DC current gain IC=3A ; VCE=5V VF Diode forward voltage IF=4A 2.5 V 2 MIN TYP. MAX 400 UNIT V 500 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BU911