SCS202PD Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Application Ultra high speed switching A 3 Features L 2 1 Four types of packaging are available. S S C -59 High speed. (trr=1.5ns Typ.) 2 3 Top View B 1 C ATHODE Suitable for high packing density layout. 1 ANODE V 3 High reliability. D G 2 C ATHODE Marking code: MO Construction J C K H Silicon epitaxial planar SC-59 MAXIMUM RATINGS (EACH DIODE) Symbol Rating Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Dim Min Max A 2.700 3.100 B 1.300 1.700 C 1.000 1.300 D 0.350 0.500 Value Unit V RM (V) 80 Vdc V R (V) 80 Vdc I FM (mA) 300 mAdc G 1.700 2.300 I o (mA) 100 H 0.000 0.100 0.100 0.260 Surge current I surge (A) 4 mW J Power dissipation (TOTAL) P d (mW) 200 mW K 0.200 0.600 Junction temperature T j(ºC) 150 ºC L 1.250 1.650 Storage temperature S 2.250 3.000 T stg(ºC) -55~+155 ºC V 0.400 0.450 P / N Type N All Dimension in mm ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE) Characteristic Forward voltage (I F = 100) Reverse current (I R = 70uA) Capacitance between terminals (V R = 6, f = 1.0 MHz) Reverse recovery time (V R = 6, f = 5.0 MHz) 1. FR– 5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Symbol Min Max Unit VF (V) － 1.2 Vdc IR － 0.1 µAdc CT(pF) － 3.5 mVdc t rr(ns) － 4 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual Page 1 of 3 SCS202PD Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente 50 F OR WAR D C UR R E NT : I F ( mA) 125 100 75 50 25 0 25 0 50 75 100 5 T a=85ºC 50ºC 25ºC 2 1 0ºC 30ºC 0.5 0.2 0.1 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 P ower attenuation curve F orward characteris tics T a 100 C 75 C 50 C 10 25 C 1 0 C 25 C 0.1 10 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 10 AMB IE NT T E MP E R AT UR E :T a (ºC ) 100 0.01 0 20 F OR WAR D V OLT AG E : V F ( V ) 1000 R E V E R S E C UR R E NT : I R ( nA) 125 CAPACITANCE BETWEEN TERMINALS : C T ( pF) P OWE R DIS S IP AT ION : P d / P d Max.(%) Electrical characteristic curves (Ta=25 ºC) 20 30 40 50 60 70 80 1.6 f=1MHz 4 2 0 0 2 4 6 8 10 12 14 16 18 20 R E V E R S E V OLT AG E : V R ( V ) REVERSE VOLTAGE : V R ( V) R evers e characteris tics Capacitance between terminals characteristics Any changing of specification will not be informed individual Page 2 of 3 SCS202PD Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente 0.01µF D.U.T . rr ( ns) 10 9 V R =6V 5 P ULS E G E NE R AT OR OUT P UT 50 8 50 S AMP LING OS C ILLOS C OP E 6 INP UT 5 4 3 100ns 2 OUT P UT 1 0 0 1 2 3 4 5 6 7 8 9 10 IR 0 trr FORWARD CURRENT : I F ( mA) 0.1I R REVERSE RECOVERY TIME : t 7 Reverse recovery time R evers e recovery time (trr) meas urement circuit http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3