BVDSS = 650 V RDS(on) typ = 0.83 Ω HFP10N65S ID = 9.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V q q q q q q q q 1 2 3 1.Gate 2. Drain 3. Source q 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 650 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 9.2 A Drain Current – Continuous (TC = 100℃) 5.5 A IDM Drain Current – Pulsed 36.8 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ IAR Avalanche Current (Note 1) 9.2 A EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 156 W 1.25 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 0.8 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Sep 2009 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 4.6 A -- 0.83 1.0 Ω VGS = 0 V, ID = 250 ㎂ 650 -- -- V ID = 250 ㎂, Referenced to 25℃ -- 0.7 -- V/℃ VDS = 650 V, VGS = 0 V -- -- 1 ㎂ VDS = 520 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1450 1885 ㎊ -- 145 190 ㎊ -- 13 17 ㎊ -- 23 55 ㎱ -- 69 150 ㎱ -- 144 300 ㎱ -- 77 165 ㎱ -- 29 38 nC -- 6.8 -- nC -- 10.3 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 325 V, ID = 9.2 A, RG = 25 Ω (Note 4,5) VDS = 520V, ID = 9.2 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 9.2 ISM Pulsed Source-Drain Diode Forward Current -- -- 36.8 VSD Source-Drain Diode Forward Voltage IS = 9.2 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ㎱ Qrr Reverse Recovery Charge IS = 9.2 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 4.2 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.2mH, IAS=9.2A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.2A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Electrical Characteristics TC=25 °C HFP10N65S ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance 2.0 VGS = 10V 1.5 1.0 VGS = 20V 0.5 o * Note : TJ = 25 C 0.0 0 5 10 15 20 ID, Drain Current[A] 25 30 35 VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3000 12 Ciss = Cgs + Cgd (Cds = shorted) Crss = Cgd Capacitances [pF] 2500 Ciss 2000 1500 Coss ∗ Note ; 1000 1. VGS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] Coss = Cds + Cgd VDS = 120V 10 VDS = 300V VDS = 520V 8 6 4 2 * Note : ID = 9.2A 0 -1 10 0 0 10 1 10 0 4 8 12 16 20 24 28 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 32 ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Typical Characteristics (continued) RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.5 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 4.6 A 0.0 -100 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 10 Operation in This Area is Limited by R DS(on) 2 10 μs 8 ID, Drain Current [A] 100 μs 1 10 1 ms 10 ms 100 ms DC 0 10 -1 10 * Notes : o 1. TC = 25 C 6 4 2 o 2. TJ = 150 C 3. Single Pulse -2 0 1 10 2 10 0 25 3 10 10 50 75 125 150 o Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [ C] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature 0 (t), Thermal Response D = 0 .5 θJC 10 Z ID, Drain Current [A] 10 0 .2 10 -1 * N o te s : 1 . Z θJC (t) = 0 .8 0 .1 PDM 0 .0 1 s in g le p u ls e -2 t1 10 -5 C /W M a x . 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 2 10 o 2 . D u ty F a c to r , D = t 1 /t 2 0 .0 5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Package Dimension TO-220 (A) 9.90±0.20 ±0 6.50±0.20 1.30±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 4.50±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 . φ3 60 0 .2 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S TO-220 (B) ±0.20 4.57±0.20 84 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 2.54typ 2.54typ 0.81±0.20 0.40±0.20 ◎ SEMIHOW REV.A0,MAY 2009