1N-SS254 HIGH-SPEED SWITCHING DIODE Max. 0.45 Features • Ultra-high speed • High withstand voltage • Low leakage and high voltage Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 35 V Average Rectified Current IO 110 mA Peak Forward Current IFM 300 mA Non-Repetitive Peak Forward Surge Current (t = 1 s) IFSM 400 mA Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 35 V IR 0.5 μA Capacitance at VR = 0.5 V, f = 1 MHz CT 3 pF Reverse Recovery Time at IF = 10 mA, VR = 6 V trr 4 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/06/2007