SB721Q-40 Silicon Epitaxial Planar Schottky Barrier Diode Applications • High speed switching Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 40 V Mean Rectifying Current IO 30 mA IFSM 200 mA Junction Temperature TJ 125 O Storage Temperature Range Tstg - 40 to + 125 O Peak Forward Surge Current C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Forward Voltage at IF = 1 mA VF - - 0.37 V Reverse Current at VR = 25 V IR - - 0.5 μA Reverse Voltage at IR = 10 μA VR 40 - - V Capacitance between Terminals at VR = 1 V, f = 1 MHz CT - 2 - pF SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/06/2007 SB721Q-40 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/06/2007