BAS85 SCHOTTKY BARRIER DIODE Ultra High-Speed Switching, Voltage Clamping Protection Circuits and Blocking Applications Features • Low forward voltage. • Guard ring protected. • Hermetically-sealed leaded glass package. Absolute Maximum Ratings (Ta = 25oC) Parameter Symbol Limits Unit Continuous reverse voltage VR 30 V Continuous forward current IF 200 mA Average forward current IF(AV) 200 mA Repetitive peak forward current IFRM 300 mA Non-repetitive peak forward current IFSM 5 A Operating ambient temperature Tamb -65 to +125 O C Junction temperature Tj 125 O Storage temperature range TS -65 to +150 O Rthja 320 Thermal resistance from junction to ambient C C K/W Characteristics at Ta = 25oC Parameter Forward voltage at IF = 0.1mA at IF = 1mA at IF = 10mA at IF = 30mA at IF = 100mA Reverse current at VR = 25V Reverse recovery time at IF = 10mA, IR = 10mA, RL = 100Ω Symbol Min. Typ. Max. Unit VF VF VF VF VF - - 240 320 400 500 800 mV mV mV mV mV IR - - 2.3 μA trr - - 4 ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/08/2005 BAS85 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/08/2005