SEMTECH_ELEC BAS116

BAS116
LOW LEAKAGE SWITCHING DIODE
Features
• Plastic SMD package
• Low leakage current
• High switching speed
3
2
1
Marking Code: JV
SOT-23 Plastic Package
Application
• Low leakage current applications in
surface mounted circuits.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
Continuous Forward Current
IF
215
mA
IFRM
500
mA
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
t = 1 µs
t = 1 ms
t=1s
Ptot
4
1
0.5
250
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 65 to + 150
O
Symbol
Max.
Unit
VF
VF
VF
VF
0.9
1
1.1
1.25
V
V
V
V
IR
5
80
nA
Cd
2
pF
trr
3
µs
IFSM
Power Dissipation
A
mW
C
C
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Reverse Current
at VR = 75 V
at VR = 75 V, TJ = 150 OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, RL = 100 Ω, irr = 0.1 IR
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/01/2008
BAS116
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/01/2008