MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V IC 200 mA Collector Current Continuous Total Device Dissipation Ptot Derate above 25 OC 1) 200 1) 1.8 Thermal Resistance Junction to Ambient RθJA 417 Junction and Storage Temperature Range TJ,Ts -55 to +150 mW mW/ OC C/W O C O FR-5=1×0.75×0.062 in. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Characteristics at Tamb = 25 OC Parameter Symbol Min. Max. Unit at VCE = 1 V, IC = 0.1 mA hFE 40 - - at VCE = 1 V, IC = 1 mA hFE 70 - - at VCE = 1 V, IC = 10 mA hFE 100 300 - at VCE = 1 V, IC = 50 mA hFE 60 - - at VCE = 1 V, IC = 100 mA hFE 30 - - at IC = 10 mA, IB = 1 mA VCEsat - 0.2 V at IC = 50 mA, IB = 5 mA VCEsat - 0.3 V at IC = 10 mA, IB = 1 mA VBEsat 0.65 0.85 V at IC = 50 mA, IB = 5 mA VBEsat - 0.95 V ICBO - 50 nA IEBO - 50 nA V(BR)CBO 60 - V V(BR)CEO 40 - V V(BR)EBO 6 - V fT 300 - MHz Cobo - 4 pF Cibo - 8 pF hie 1 10 KOhms hre 0.5 8 X 10-4 hfe 100 400 - DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cutoff Current at VCB = 30 V Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Current Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Input Capacitance at VEB = 0.5 V, IC = 0, f = 1 MHz Input Impedance at IC = 1 mA, VCE = 10 V, f = 1 KHz Voltage Feedback Ratio at IC = 1 mA, VCE = 10 V, f = 1 KHz Small-Signal Current Gain at IC = 1 mA, VCE = 10 V, f = 1 KHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Characteristics at Tamb=25 OC Output Admittance at IC = 1 mA, VCE = 10 V, f = 1 KHz Noise Figure at IC = 1 µA, VCE = 5 V, RS = 1 Kohms, f = 1 KHz hoe 1 40 µmhos NF - 5 dB td - 35 ns Rise Time IC = 10 mA, IB1 = 1 mA tr - 35 ns Storage Time VCC = 3 V, IC = 10 mA, ts - 200 ns Fall Time IB1 = IB2 = 1 mA tf - 50 ns 500 Vce=5V 400 125°C 300 200 25°C -40°C 100 0 0.1 100 10 1 Ic-Collector Current (mA) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 β=10 -40°C 25°C 0.6 125°C 0.4 0.1 1 10 IC-Collector Current (mA) 100 VBE(ON) - Base-emitter on voltage (v) VBESAT-Base-Emitter Voltage (V) Typical Pulsed Current Gain vs Collector Current VCESAT-Collector-Emitter Voltage (v) VCC = 3 V, VBE = -0.5 V, hFE -Typical Pulsed Current Gain Delay Time Collector-Emitter Saturation Voltage vs Collector Current 0.15 β=10 125°C 0.1 25°C 0.05 -40°C 0.1 100 10 1 IC-Collector Current (mA) Base-Emitter On Voltage vs Collector Current 1 VCE=5V 0.8 -40°C 25°C 0.6 125°C 0.4 0.2 0.1 1 10 100 Ic - Collector Current (mA) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Collector-Cutoff Current vs Ambient Temperature 500 Capacitance vs Reverse Bias Voltage VCB=30V 10 f=1.0MHz Capacitance (pF) ICBO-Collector Current (nA) 100 10 1 0.1 5 4 3 cibo cobo 2 1 0.1 100 10 1 Reverse Bias Voltage (V) 25 75 50 100 125 150 TA-Ambient Temperature (°C) Noise Figure vs Source Resistance Noise Figure vs Frequency 12 10 Ic=1.0mA Rs=200Ω NF-Noise figure (dB) NF-Noise Figure (dB) 12 VCE=5.0V 8 Ic=50μA Rs=4.0kΩ Ic=0.5mA Rs=200Ω 6 4 2 0 0.1 1 Ic=100μA Rs=500Ω 10 Ic=10mA 10 Ic=5.0mA 8 6 Ic=50μA 4 Ic=100μA 2 0 100 0.1 θ Vce=40V Ic=10mA 10 100 f-Frequency (MHz) 1000 θ hfe 0 20 40 60 80 100 120 140 160 180 PD-Power Dissipation (w) Power Dissipation vs Ambient Temperature Current Gain And Phase Angle vs Frequency -degrees hfe-Current Gain (dB) f-Frequency (kHz) 50 45 40 35 30 25 20 15 10 5 0 1 10 1 Rs-Source Resistance (kΩ ) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 125 150 Temperature (°C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 100 MMBT3904 Rise Time vs Collector Current Turn-on Time vs Collector Current 500 500 Ic IB1=IB2=10 Vcc=40V tr - Rise Time (nS) Ic IB1=IB2=10 Time (nS) 40V 15V 100 tr @ Vcc=3.0V 2.0V 100 TJ=25°C TJ=125°C 10 10 td @ VCB=0V 5 1 5 1 100 10 Ic-Collector Current (mA) Ic-Collector Current (mA) Storage Time vs Collector Current Fall Time vs Collector Current 500 500 Ic IB1=IB2=10 TJ=25°C 100 Ic IB1=IB2=10 TJ=125°C tf - Fall Time (nA) ts-Storage Time (nS) 100 10 TJ=125°C Vcc=40V TJ=25°C 100 10 10 5 5 1 10 100 1 Ic-Collector Current (mA) 100 10 Ic-Collector Current (mA) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005