MMBT9018W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit MMBT9018GW hFE 75 - 105 - MMBT9018HW hFE 105 - 190 - V(BR)CBO 30 - - V V(BR)CEO 15 - - V V(BR)EBO 5 - - V ICBO - - 50 nA VCE(sat) - - 0.5 V CCBO - 1.3 1.7 pF fT 700 1100 - MHz DC Current Gain at VCE = 5 V, IC = 1 mA Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCB = 12 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz Gain Bandwidth Product at VCE = 5 V, IC = 5 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006 MMBT9018W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006 MMBT9018W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006