ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/03/2007 ST 2N3905 / 2N3906 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Gain Bandwidth Product at -VCE = 20 V, -IC = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 5 V, f = 100 KHz Emitter Base Capacitance at -VEB = 0.5 V, f = 100 KHz Thermal Resistance Junction to Ambient 1) 2N3905 2N3906 Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 30 60 40 80 50 100 30 60 15 30 150 300 - - -ICBO - 50 nA -IEBO - 50 nA -V(BR)CBO 40 - V -V(BR)CEO 40 - V -V(BR)EBO 6 - V -VCEsat -VCEsat - 0.25 0.4 V V -VBEsat -VBEsat - 0.85 0.95 V V fT fT 200 250 - MHz MHz Ccb - 4.5 pF Ceb - 10 pF RthA - 250 1) K/W Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/03/2007 ST 2N3905 / 2N3906 DC Current Gain 2 VCE=1V TJ=125 C 1 hFE (Normalized) 25 C -55 C 0.2 0.1 0.1 1 100 10 200 I C (mA) Collector Saturation Region 1 TJ=25 C 30mA 0.8 100mA I C=1mA VCE ( V ) 0.6 0.4 10mA 0.2 0 0.001 0.1 1 10 I B (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/03/2007