ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 50 mA Collector Current (Pulse) -ICP 100 mA Collector Dissipation Ptot 400 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/5/2004 ST 2SA1016 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group F hFE 160 - 320 - G hFE 280 - 560 - H hFE 480 - 960 - -V(BR)CBO 120 - - V -V(BR)CEO 100 - - V -V(BR)EBO 5 - - V -ICBO - - 1 μA -IEBO - - 1 μA -VCE(sat) - - 0.5 V fT - 110 - MHz COB - 2.2 - pF CNO(ave) - - 35 mV CNO(peak) - - 200 mV DC Current Gain at -VCE=6V, -IC=1mA Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz Noise Peak Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/5/2004