ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 20 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1) -ICP 2 5 A Power Dissipation Ptot 400 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O 1) C C Single pulse Pw = 10 ms Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 100 mA Current Gain Group Collector Base Breakdown Voltage at -IC = 50 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 µA Collector Cutoff Current at -VCB = 20 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 0.1 A Transition Frequency at -VCE = 2 V, IE = 500 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Q R Symbol Min. Typ. Max. Unit hFE hFE 120 180 - 270 390 - -V(BR)CBO 20 - - V -V(BR)CEO 20 - - V -V(BR)EBO 6 - - V -ICBO - - 100 nA -IEBO - - 100 nA -VCE(sat) - - 0.5 V fT - 240 - MHz COB - 35 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 28/07/2006 ST 2SA1585 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 28/07/2006