SEMTECH_ELEC ST2SC380

ST 2SC380
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier application
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups R,
O, and Y, according to its DC current gain.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 C)
O
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
35
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
4
V
Collector Current
IC
50
mA
Emitter Current
-IE
50
mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
-55 to +125
O
C
C
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 12 V, IC = 2 mA
Current Gain Group
Collector Cutoff Current
at VCB = 35 V
Emitter Cutoff Current
at VEB = 4 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Transition Frequency
at VCE = 10 V, IC = 1 mA
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Collector Base Time Constant
at VCE = 10 V, -IE = 1 mA, f = 30 MHz
Power Gain
at VCC = 6 V, f = 10.7 MHz, -IE = 1 mA
R
O
Y
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
40
70
120
-
80
140
240
-
ICBO
-
-
0.1
µA
IEBO
-
-
0.1
µA
VCE(sat)
-
-
0.4
V
VBE(sat)
-
-
1
V
fT
100
-
400
MHz
Cob
1.4
2
3.2
pF
Cc,rbb’
10
-
50
ps
Gpe
27
29
33
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006
ST 2SC380
Ic[mA], COLLECTOR CURRENT
10
1000
I B =90 A
VCE=12V
I B =80 A
8
6
h FE , DC CURRENT GAIN
I B =70 A
I B =60 A
I B =50 A
4
I B =40 A
I B =30 A
2
I B =20 A
I B =10 A
100
0
0
2
4
6
8
10
10
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
0.1
0.01
0.1
1
24
20
16
12
8
4
0
10
VCE=12V
28
0
0.2
Ic[mA], COLLECTOR CURRENT
0.6
0.8
1.0
1.2
f=1MHz
I E =0
1
0.1
100
Figure 4. Base-Emitter On Voltage
fT [ MHz ] , CURRENT GAIN BANDWIDTH PRODUCT
Cob [ pF ] , CAPACITANCE
10
10
0.4
VBE [V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Satruation Voltage
1
100
32
Ic=10I B
1
10
Figure 2. DC Current Gain
Ic[mA], COLLECTOR CURRENT
VBE(sat) , VCE(sat) [ V ] , SATURATION VOLTAGE
Figure 1. Static Characteristic
10
1
I C[mA], COLLECTOR CURRENT
1000
VCE=10V
100
10
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
1
10
I C[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006