ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Unit Value ST 2SC828 ST 2SC828A Collector Base Voltage VCBO 30 45 V Collector Emitter Voltage VCEO 25 45 V Emitter Base Voltage VEBO 7 V Peak Collector Current ICM 100 mA Collector Current IC 50 mA Power Dissipation Ptot 400 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC828 / 828A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Q hFE 130 - 280 - R hFE 180 - 360 - S hFE 260 - 520 - ST 2SC828 V(BR)CBO 30 - - V ST 2SC828A V(BR)CBO 45 - - V ST 2SC828 V(BR)CEO 25 - - V ST 2SC828A V(BR)CEO 45 - - V V(BR)EBO 7 - - V VCE(sat) - 0.14 - V VBE - - 0.8 V fT - 220 - MHz NF - 6 - dB DC Current Gain at IC=2mA, VCE=5V Current Gain Group Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=2mA Emitter Base Breakdown Voltage at IE=10μA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figure at VCE=5V,IE=0.2mA, RG=2kΩ,f=1kHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002