ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (pulse) ICP 7 A Total Power Dissipation(Ta = 25 OC) Ptot 1 W Total Power Dissipation(TC = 25 OC) Ptot 10 W Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 1 A Current Gain Group at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A Base Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A Output Capacitance at VCB = 10 V, f = 1 MHz R Q P E C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 60 100 160 200 30 - 120 200 320 400 - - ICBO - - 1 µA IEBO - - 1 µA VCEsat - - 0.5 V VBEsat - - 2 V fT - 90 - MHz Cob - 45 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2006 ST 2SD882H o TYPICAL CHARACTERISTICS (Ta=25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NOTE 1.Aluminum heat sink of 1.0 mm thickness. 2.With no insulator film. 3.With silicon compound. 0 0 50 100 40 20 10 3 1 0.3 0.1 0 150 Rth-Thermal Resistance- oC/W d ite heat sin k m Without Li 9cm 2 2 n 2 io 25c m 60 at nk si 4 ite d ip at he 100 cm 2 Lim ss ite 6 S/b 80 Di dT-Percentage of Rated Current-% 8 VCE=10V I C=1.0A 30 Duty=0.001 100 fin In P T-Total Power Dissipation-W 10 THERMAL RESISTANCE vs. PULSE WIDTH DERATING CURVES FOR ALL TYPES 100 50 0.3 150 1 3 10 30 100 300 1000 PW-Pulse Width-mS Ta-Ambient Temperature -o C Tc-Case Temperature -o C 0.3 I C-Collector Current-A 1 0.1 0.03 NOTE 1.T C=25o C 2.Curves must be derated Iinearly with increase of temperature and Duty Cycle. 3 6 10 7 1.2 6 5 0.8 4 3 30 60 4 8 12 0.3 3 1 3 10 0.1 20 3 10 100 30 10 3 Cib 100 60 30 Cob 10 6 3 1 0.01 I C-Collector Current-A f=1.0MHz I E =0(Cob) I C=0(Cib ) 300 Cib -Input Capacitance-pF Cob-Output Capacitance-pF VCE(sat) 0.01 0.006 0.003 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE VCE=5.0V Forced air cooling (with heat sink) 300 1 16 GAIN BANDWIDTH PRODUCT vs. COLLCETOR CURRENT 1000 VBE(sat) 0.001 0.003 0.01 0.03 0.1 0.3 1 0.6 VBE I C-Collector Current-A I C=10.I B Pulse Test 0.1 0.06 0.03 10 6 3 o Voltage-V VCE-Collector to Emitter fT-Gain Bandwidth Product-MHz VBE(sat) -Base Saturation Voltage-v VCE(sat)-Collector Saturation Voltage-V 1 0.6 0.3 30 100 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 3 60 1 0.001 0.003 0.01 0.03 0.1 0.3 0 VCE-Collector to Emitter Voltage-V 10 2 0.4 h FE 100 I B =1mA 0.01 1 300 10 9 8 1.6 VCEO MAX. IC-Collector Current-A 3 VCE=2.0V Pulse Test Pulse Test h FE -DC Current Gain I C(pulse) MAX.(PW 10ms,Duty Cycle 50%) PW 1m 10 s =1 I C(DC) MAX. ms 00 DC s Di ss (S ip ing at L io le S/ n no imit b ed nr Li ep m et ite itiv d ep uls e) 0.03 0.1 0.3 1 I C-Collcetor Current-A 1 3 6 10 30 60 VCB-Collector to Base Voltage-V VEB -Emitter to Base Voltage-V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2006 VBE -Base Emitter Voltage-V 1000 2.0 10 DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE SAFE OPERATING AREAS